TCAD Device
3D MOSFET TCAD Field Prediction
Predict potential, electron density and hole density on a fixed 23,593-node three-dimensional MOSFET bulk mesh from gate and drain voltages.
Published scope
The inputs, geometry and outputs below follow the registered public case. Published verification applies only to the stated conditions. Service availability requires a live request.
Direct Parametric MLP
- Geometry
- DEVSIM 3D MOSFET bulk mesh
- Geometry scope
- same_geometry_only
Adjustable inputs
| Input | Range | Default |
|---|---|---|
| Gate voltage | 0.0 – 0.7 V | 0.35 |
| Drain voltage | 0.05 – 0.2 V | 0.1 |
Output fields
- MOSFET bulk-node fields: Potential, Electron Density, Hole Density
Registered verification
- registered_status
- passed
- summary
- All six deterministic post-freeze DEVSIM conditions passed the frozen field and terminal thresholds.
- registered_parameters
- gate_voltage_v: 0.15; drain_voltage_v: 0.14
- registered_reference
- Post-freeze native Windows DEVSIM same-point condition vg0150mv_vd0140mv
- point_count
- 23593
- condition_count
- 6
- holdout_metrics
- potential: RMSE: 0.01188738036818034; Relative L2: 0.029497007372739133; Correlation: 0.9993099828438; electron_density_log10: RMSE: 0.20093425408978596; Relative L2: 0.02821295044043586; Correlation: 0.9991618447711624; hole_density_log10: RMSE: 0.1828682269483833; Relative L2: 0.011934013959945396; Correlation: 0.9993472063423209
- web_scope
- The Web job returns node fields and does not rerun DEVSIM or return terminal current.
Recorded workflow evidence
- Project opening
- PASS
- Save and reopen
- PASS
- Training
- NOT_RUN
- Prediction
- NOT_RUN
- Independent accuracy
- NOT_RUN
- Portable validation
- NOT_RUN
These are recorded checks; they do not establish live service availability or accuracy for every new request.