TCAD 器件
三维 MOSFET TCAD 场预测
根据栅极电压和漏极电压，在固定的 23,593 节点三维 MOSFET 体网格上预测电势、电子浓度和空穴浓度。
公开范围
本页展示案例登记的输入、几何和输出。已有验证结论适用于明确列出的工况。在线服务的可用性需要实际请求确认。
Direct Parametric MLP
- 几何范围
- DEVSIM 3D MOSFET bulk mesh
- 几何约束
- same_geometry_only
可调输入
| 输入项 | 范围 | 默认值 |
|---|---|---|
| gate_voltage_v | 0.0 – 0.7 V | 0.35 |
| drain_voltage_v | 0.05 – 0.2 V | 0.1 |
输出字段
- domain: Potential, Electron Density, Hole Density
已登记验证
- registered_status
- passed
- summary
- All six deterministic post-freeze DEVSIM conditions passed the frozen field and terminal thresholds.
- registered_parameters
- gate_voltage_v: 0.15; drain_voltage_v: 0.14
- registered_reference
- Post-freeze native Windows DEVSIM same-point condition vg0150mv_vd0140mv
- point_count
- 23593
- condition_count
- 6
- holdout_metrics
- potential: RMSE: 0.01188738036818034; Relative L2: 0.029497007372739133; Correlation: 0.9993099828438; electron_density_log10: RMSE: 0.20093425408978596; Relative L2: 0.02821295044043586; Correlation: 0.9991618447711624; hole_density_log10: RMSE: 0.1828682269483833; Relative L2: 0.011934013959945396; Correlation: 0.9993472063423209
- web_scope
- The Web job returns node fields and does not rerun DEVSIM or return terminal current.
已记录流程证据
- 工程打开
- PASS
- 保存后重开
- PASS
- 训练
- NOT_RUN
- 预测
- NOT_RUN
- 独立精度验证
- NOT_RUN
- 迁移验证
- NOT_RUN
上述状态来自已记录的检查，各项证据分别适用。新请求的服务可用性和精度需要单独判断。